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november 2011 doc id 18354 rev 6 1/18 18 STRH40P10 rad-hard p-channel 100 v, 34 a power mosfet features fast switching 100% avalanche tested hermetic package 100 krad tid see radiation hardened applications satellite high reliability description this p-channel power mosfet is developed with stmicroelectronics unique stripfet? process. it has specifically been designed to sustain high tid and provide immunity to heavy ion effects. figure 1. internal schematic diagram note: contact st sales office for information about the specific conditions for product in die form and for other packages. v bdss i d r ds(on) q g 100 v 34 a 0.060 ohm 162 nc to-254aa 1 2 3 d (1) g ( 3 ) s (2) s c06140p table 1. device summary part number escc part number quality level package lead finish mass (g) temp. range eppl STRH40P10hy1 - engineering model to-254aa gold 10 -55 to 150c - STRH40P10hyg tbd escc flight target www.st.com
contents STRH40P10 2/18 doc id 18354 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STRH40P10 electrical ratings doc id 18354 rev 6 3/18 1 electrical ratings (t c = 25 c unless otherwise specified). note: for the p-channel mosfet actual polarity of voltages and current has to be reversed. table 2. absolute maximum ratings (pre-irradiation) symbol parameter value unit v ds (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-source voltage (v gs = 0) 100 v v gs (2) 2. this value is guaranteed over the full range of temperature. gate-source voltage 20 v i d (3) 3. rated according to the rthj-case + rthc-s. drain current (continuous) 34 a i d (3) drain current (continuous) at t c = 100 c 21 a i dm (4) 4. pulse width limited by safe operating area. drain current (pulsed) 136 a p tot (3) total dissipation 176 w dv/dt (5) 5. i sd 40 a, di/dt 100 a/s, v dd = 80% v (br)dss. peak diode recovery voltage slope 2.5 v/ns t stg storage temperature - 55 to 150 c t j operating junction temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.71 c/w r thc-s case-to-sink typ 0.21 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) tbd a e as (1) single pulse avalanche energy (starting t j =25 c, i d = 17 a, v dd =50 v) 1133 mj e as single pulse avalanche energy (starting t j =110 c, i d = 17 a, v dd =50 v) 332 mj
electrical ratings STRH40P10 4/18 doc id 18354 rev 6 e ar repetitive avalanche (v dd = 50 v, i ar = 24 a, f = 100 khz, t j = 25 c, duty cycle = 10%) 25 mj repetitive avalanche (v dd = 50 v, i ar = 17 a, f = 100 khz, t j = 110 c, duty cycle = 10%) 8 1. maximum rating value. table 4. avalanche characteristics (continued) symbol parameter value unit
STRH40P10 electrical characteristics doc id 18354 rev 6 5/18 2 electrical characteristics (t c = 25 c unless otherwise specified). note: for the p-channel mosfet actual polarity of voltages and current has to be reversed. pre-irradiation table 5. pre-irradiation on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss 10 a i gss gate body leakage current (v ds = 0) v gs = 20 v v gs = -20 v -100 100 na na bv dss (1) 1. this rating is guaranteed @ t j 25 c (see figure 10: normalized bv dss vs temperature ). drain-to-source breakdown voltage v gs = 0, i d = 1 ma 100 v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 2 4.5 v r ds(on) static drain-source on resistance v gs = 12 v; i d = 17 a 0.060 0.075 ? table 6. pre-irradiation dynamic symbol parameter test conditions min. typ. max. unit c iss c oss (1) c rss input capacitance output capacitance reverse transfer capacitance v gs = 0, v ds = 25 v, f=1 mhz 3710 510 204 4640 635 255 5570 760 306 pf pf pf q g q gs q gd total gate charge gate-to-source charge gate-to-drain (?miller?) charge v dd = 50 v, i d = 34 a, v gs =12 v 130 14 32 162 18 40 194 22 48 nc nc nc r g (1) 1. not tested, guaranteed by process. gate input resistance f=1mhz gate dc bias=0 test signal level=20mv open drain 1.5 ? table 7. pre-irradiation switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 50 v, i d = 17 a, r g = 4.7 ?, v gs = 12 v 15 19 68 34 24 31 129 46 33 43 190 58 ns ns ns ns
electrical characteristics STRH40P10 6/18 doc id 18354 rev 6 table 8. pre-irradiation source drain diode (1) 1. refer to the figure 16 . symbol parameter test conditions min. typ. max unit i sd i sdm (2) 2. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 34 136 a a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 30 a, v gs = 0 1.1 v t rr (4) q rr (4) i rrm (4) 4. not tested in production, guaranteed by process. reverse recovery time reverse recovery charge reverse recovery current i sd = 34 a, di/dt = 40 a/s v dd = 12 v, t j = 25 c 276 345 4.1 316 414 ns c a t rr (4) q rr (4) i rrm (4) reverse recovery time reverse recovery charge reverse recovery current i sd = 34 a, di/dt = 40 a/s v dd = 12 v, t j = 150 c 473 7.1 133 ns c a
STRH40P10 radiation characteristics doc id 18354 rev 6 7/18 3 radiation characteristics the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to radiative environments. every manufacturing lot is tested for total ionizing dose (irradiation done according to the escc 22900 specification, window 1) using the to-3 package. both pre-irradiation and post-irradiation performances are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (t amb = 22 3 c unless otherwise specified). total dose radiation (tid) testing one bias conditions using the to-3 package: ?v gs bias: + 20 v applied and v ds = -100 v during irradiation the following parameters are measured (see table 9 , table 10 and table 11 ): before irradiation after irradiation after 24 hrs @ room temperature after 168 hrs @ 100 c anneal table 9. post-irradiation on/off states @ t j = 25 c, (co60 rays 100 k rad(si)) symbol parameter test conditions drift values ? unit i dss zero gate voltage drain current (v gs = 0) 80% bv dss +1 a i gss gate body leakage current (v ds = 0) v gs = 12 v v gs = -12 v 1.5 -1.5 a bv dss drain-to-source breakdown voltage v gs = 0, i d = 1 ma +5% v v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma +150% v r ds(on) static drain-source on resistance v gs = 10 v; i d = 20 a -4% / +35% ? table 10. dynamic post-irradiation @ t j = 25 c, (co60 rays 100 k rad(si)) (1) 1. parameter not measured after irradiation but guar anteed by the results obtained during the evaluation phase that proves this parameter is directly correlated to the v gs(th) shift. symbol parameter test conditions drift values ? unit q g total gate charge i g = 1 ma, v gs = 12 v, v ds = 50 v, i ds = 20 a -15% / +5% nc q gs gate-source charge -5% / +200% q gd gate-drain charge -10% / +100%
radiation characteristics STRH40P10 8/18 doc id 18354 rev 6 single event effect, soa the technology of the stmicroelectronics rad-hard power mosfets is extremely resistant to heavy ion environment for single event effect (irradiation per mil-std-750e, method 1080 bias circuit in figure 3: single event effect, bias circuit ). seb and segr tests have been performed with a fluence of 3e+5 ions/cm2. the accept/reject criteria are: seb test: drain voltage checked, trigger level is set to v ds = - 5 v. stop condition: as soon as a seb occurs or if th e fluence reaches 3e+5 ions/cm2. segr test: the gate current is monitored every 200 ms. a gate stress is performed before and after irradiation. stop condition: as soon as the gate current reaches 100 na (during irradiation or during pigs test) or if the fluence reaches 3e+5 ions/cm2. the results are: ? no seb ? segr test produces the following soa (see table 12: single event effect (see), safe operating area (soa) and figure 2: single event effect, soa ) table 11. source drain diode post-irradiation @ t j = 25 c, (co60 rays 100 k rad(si)) (1) 1. refer to figure 16 . symbol parameter test conditions drift values ? .unit v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 5% v table 12. single event effect (see), safe operating area (soa) ion let (mev/(mg/cm 2 ) energy (mev) range (m) v ds (v) @v gs =0 @v gs = 2 v @v gs = 5 v @v gs = 10 v @v gs = 15 v kr 32 768 94 - -60 - - - 756 92 - - - - -20
STRH40P10 radiation characteristics doc id 18354 rev 6 9/18 figure 2. single event effect, soa figure 3. single event effect, bias circuit (a) a. bias condition during radiation refer to table 12: single event effect (see), safe operating area (soa) . 9gv9gvpd[ 9jv9 .u0h9fpepj
electrical characteristics (curves) STRH40P10 10/18 doc id 18354 rev 6 4 electrical characteristics (curves) figure 4. safe operating area figure 5. thermal impedance figure 6. output characteristics figure 7. transfer characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e dc oper a tion hv 3 25 3 0v1 i d 60 40 20 0 0 10 v d s (v) 15 (a) 5 4 v 8 0 100 5 v v g s = 12 v 120 140 hv 3 2500v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 10 8 0 100 v d s = 3 v t j = 150 c t j = -55 c t j = 25 c hv 3 2505v1 -v g s 6 4 2 0 0 20 q g (nc) (v) 8 60 10 v dd =50 v 100 140 i d = - 3 4 a i d = -17 a i d = - 8 .5 a hv 3 2510v1 c 3 100 2100 1100 100 0 40 v d s (v) (pf) 20 4100 60 ci ss co ss cr ss 5100 6100 8 0 hv 3 2520v1
STRH40P10 electrical characteristics (curves) doc id 18354 rev 6 11/18 figure 10. normalized bv dss vs temperature figure 11. static drain-source on resistance figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature figure 14. source drain-diode forward characteristics
test circuits STRH40P10 12/18 doc id 18354 rev 6 5 test circuits figure 15. switching times test circuit for resistive load (1) 1. max driver v gs slope = 1v/ns (no dut) figure 16. source drain diode
STRH40P10 test circuits doc id 18354 rev 6 13/18 figure 17. unclamped inductive load test circuit (single pulse and repetitive)
package mechanical data STRH40P10 14/18 doc id 18354 rev 6 6 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 13. to-254aa mechanical data dim. mm inch min. typ. max. min. typ. max. a 13.59 13.84 0.535 0.545 b 13.59 13.84 0.535 0.545 c 20.07 20.32 0.790 0.800 d 6.32 6.60 0.249 0.260 e 1.02 1.27 0.040 0.050 f 3.56 3.81 0.140 0.150 g 16.89 17.40 0.665 0.685 h 6.86 0.270 i 0.89 1.02 1.14 0.035 0.040 0.045 j 3.81 0.150 k 3.81 0.150 l 12.95 14.50 0.510 0.571 m 2.92 3.18 n0.71 r1 1.00 0.039 r2 1.52 1.65 1.78 0.060 0.065 0.070
STRH40P10 package mechanical data doc id 18354 rev 6 15/18 figure 18. to-254aa drawing
order codes STRH40P10 16/18 doc id 18354 rev 6 7 order codes contact st sales office for information about the specific conditions for products in die form and for other packages. table 14. ordering information order code escc part number quality level eppl package lead finish marking packing STRH40P10hy1 - engineering model - to-254aa gold tbd strip pack STRH40P10hyg tbd escc flight target
STRH40P10 revision history doc id 18354 rev 6 17/18 8 revision history table 15. document revision history date revision changes 23-dec-2010 1 first release. 02-feb-2011 2 updated figure 1 . 03-may-2011 3 updated figure 1 . 22-jun-2011 4 updated features on coverpage. 25-jul-2011 5 updated order codes in table 1: device summary and table 14: ordering information . minor text changes. 09-nov-2011 6 updated dynamic values on table 6: pre-irradiation dynamic , table 7: pre-irradiation switching times and table 8: pre-irradiation source drain diode .
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